Initiation Mechanism of Pulsed Surface Flashover along Silicon in Vacuum by Pre-breakdown Conduction and Photon Emission
نویسندگان
چکیده
Pre-breakdown (leakage) and breakdown currents and photon-emission associated with the currents, under impulse (0.36!10 IJ-S) voltage stress, along high purity (p>30 KQ em) silicon, with and without gold end contacts in vacuum (-lQ-6 Torr), are discussed. Three distinct phases leading to the breakdown condition are observed. These are one-carrier (hole) leakage current, two-carrier (electrons and holes) current, and complete surface flashover processes. The onset of photon-emission coincides with the onset of two-carrier current. The temporally resolved one-carrier leakage current (ohmic or charge injection dominated) and photon-emission data show that there is a certain threshold leakage current which initiates the rest of the processes.
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